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Toshiba Electronic Devices and Storage Corporation / TPN1R603PL,L1Q

TPN1R603PL,L1Q

Fabrikant Deel Zuel: TPN1R603PL,L1Q
Fabrikant beschwéiert: Toshiba Electronic Devices and Storage Corporation
Deel vun Beschreiwung: MOSFET N-CH 30V 80A 8TSON
Datenblätter: TPN1R603PL,L1Q Datenblätter
Bleif gratis Status / RoHS Status: Bleiffräi / RoHS konform
Stock Conditioun: Op Lager
Schëff Vun: Hong Kong
Liwwerung Wee: DHL/Fedex/TNT/UPS/EMS
REMARK
Toshiba Electronic Devices and Storage Corporation TPN1R603PL,L1Q ass verfügbar op chipnets.com. Mir verkafen nëmmen New&Original Deel a bidden 1 Joer Garantiezäit. Wann Dir méi iwwer d'Produkter wësse wëllt oder méi bessere Präis gëlle wëllt, kontaktéiert eis w.e.g. klickt op den Online Chat oder schéckt eis en Devis.
All Eelctronics Komponente wäerte ganz sécher duerch ESD antistatesche Schutz packen.

package

Spezifizéierung
Typ Beschreiwung
SerieU-MOSIX-H
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Deel StatusActive
FET TypN-Channel
TechnologieMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Stroum - Kontinuéierlech Drain (Id) @ 25 ° C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 40A, 10V
Vgs (th) (Max) @ Id2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Kapazitanz (Ciss) (Max) @ Vds3900 pF @ 15 V
FET Feature-
Power Dissipatioun (Max)104W (Tc)
Betribssystemer Temperatur175°C
Opriichte TypSurface Mount
Fournisseur Device Package8-TSON Advance (3.3x3.3)
Package / Fall8-PowerVDFN
KEE OPTIONEN

Stock Status: 15760

Minimum: 1

Quantitéit Eenzelpräis Ext. Präis

Präis ass net verfügbar, w.e.g. RFQ

Gidderween Berechnung

US $40 vun FedEx.

Kommt an 3-5 Deeg

Express: (FEDEX, UPS, DHL, TNT) Gratis Versand op éischt 0,5 kg fir Bestellungen iwwer 150 $, Iwwergewiicht gëtt separat berechent

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